ION IRRADIATION AND ANNEALING STUDIES OF NbC THIN FILMS.

Naoto Kobayashi*, R. Kaufmann, G. Linker

*この研究の対応する著者

研究成果: Conference contribution

抄録

Single-phase NbC thin films, prepared by reactive RF sputtering, have been irradiated with 600 keV Ar ions and 200 keV He ions at room temperature in the fluence range from 0. 01 to 100 dpa. With the preservation of the B1 structure, the lattice parameter, a//o, increases at the first stage of the irradiation and then decreases down to a saturation value for higher fluences. The superconducting transition temperature, T//c, decreases continuously from 11. 2 K to 4 K and saturates in the fluence range of a//o saturation. The effects of both ion species irradiations on the changes of the lattice parameter and T//c depressions are nearly the same at a given dpa. Isochronal annealing processes of the sample that has the maximum lattice parameter have revealed a few recovery stages of the lattice parameter and T//c. The recovery stage at 700 degree C coincides with the recovery of the displacements of the metal atoms.

本文言語English
ホスト出版物のタイトルUnknown Host Publication Title
Place of PublicationAmsterdam, Ne
出版社North-Holland
ページ732-735
ページ数4
出版ステータスPublished - 1985
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)

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