Ion modification for improvement of electrical properties of perovskite-based ferroelectric thin films fabricated by chemical solution deposition method

Hiroshi Uchida, Shintaro Yasui, Risako Ueno, Hiroshi Nakaki, Ken Nishida, Minoru Osada, Hiroslii Funakubo, Takushi Katoda, Seiichiro Koda

研究成果: Conference contribution

抜粋

Ion modification for various perovskite-based ferroelectric thin film using rare-earth cation was attempted for improving the electrical properties. Strategy for controlling the electrical properties is mainly based on two concepts, that is, (i) substituting the volatile cations such as Pb2+ and Bi3+, and (ii) controlling the crystal anisotropy of perovskite unit cell. In this study, the influences of ion-modification conditions (i.e., amount, species and occupying site of substituent cations) on the electrical properties of perovskitc-bascd ferroelectric films fabricated by a chemical solution deposition were investigated, Substituting volatile cation in simple-perovskite oxides, such Pb2+ in Pb(Zr,Ti)O3 and Bi3+ in BiFeO3, for the rare-earth cations like La 3+ and Nd3+ reduced the leakage current density of these films due to suppressing the metal and / or oxygen vacancies, as well as in layered-perovskite oxides, such as Bi4Ti3O12 films [i.e., strategy (i)]. Also, crystal anisotropy of perovskite-bascd oxides could controlled by varying the species and the occupying site of substituent cations [i.e., strategy (ii)]; for example, the ciystal anisotropy of Pb(Zr,Ti)O3 lattice was elongated by Ti- and Zr-site (B-site) substitution using rare-earth cations whose ionic radii locate on the smaller part of rare-earth scries (such as Y3+, Dy3+), that resulted in enhancing the spontaneous polarization from 20 to 25 μC/cm, We concluded that the strategy for controlling the electrical property mentioned in this study would be applicable for a various kind of perovskite-based ferroelectric films.

元の言語English
ホスト出版物のタイトルMaterials Research Society Symposium Proceedings
ページ147-152
ページ数6
902
出版物ステータスPublished - 2005
外部発表Yes
イベント2005 MRS Fall Meeting - Boston, MA, United States
継続期間: 2005 11 282005 12 2

Other

Other2005 MRS Fall Meeting
United States
Boston, MA
期間05/11/2805/12/2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • これを引用

    Uchida, H., Yasui, S., Ueno, R., Nakaki, H., Nishida, K., Osada, M., Funakubo, H., Katoda, T., & Koda, S. (2005). Ion modification for improvement of electrical properties of perovskite-based ferroelectric thin films fabricated by chemical solution deposition method. : Materials Research Society Symposium Proceedings (巻 902, pp. 147-152)