Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures

Yamaguchi Takahide, Yosuke Sasama, Hiroyuki Takeya, Yoshihiko Takano, Taisuke Kageura, Hiroshi Kawarada

研究成果査読

2 被引用数 (Scopus)

抄録

The ionic-liquid-gating technique can be applied to the search for novel physical phenomena at low temperatures because of its wide controllability of the charge carrier density. Ionic-liquid-gated field-effect transistors are often fragile upon cooling, however, because of the large difference between the thermal expansion coefficients of frozen ionic liquids and solid target materials. In this paper, we provide a practical technique for setting up ionic-liquid-gated field-effect transistors for low-temperature measurements. It allows stable measurements and reduces the electronic inhomogeneity by reducing the shear strain generated in frozen ionic liquid.

本文言語English
論文番号103903
ジャーナルReview of Scientific Instruments
89
10
DOI
出版ステータスPublished - 2018 10 1

ASJC Scopus subject areas

  • 器械工学

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