Kinetic study of silicon precipitation from SiHCl3

Masahito Sugiura, Akio Fuwa

    研究成果: Article

    3 引用 (Scopus)

    抜粋

    Using a hot-wall CVD reactor, silicon precipitation rates in the SiHCl3-Ar and SiHCl3-H2-Ar systems were measured in order to elucidate the reaction kinetics in these systems. Silicon precipitation in the former system takes place through the thermal decomposition reaction of SiHCl3 and its rate is a function of reactant SiHCl3 mole fraction and reaction temperature. That in the latter system takes place through the hydrogen reduction of SiHCl3 in addition to the thermal decomposition reaction and its rate can be expressed as a function of SiHCl3 and H2 mole fractions and temperature. In both systems, the transition temperature from chemical reaction control region to mass transfer control region is around 1173 K. From the observed reactant concentration dependence on these rate expression, a plausible reaction mechanism is proposed where SiCl2(g) and its adsorbed species are the reaction intermediate in the precipitation reaction scheme.

    元の言語English
    ページ(範囲)436-441
    ページ数6
    ジャーナルNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
    58
    発行部数4
    出版物ステータスPublished - 1994 4

      フィンガープリント

    ASJC Scopus subject areas

    • Metals and Alloys

    これを引用