Large area diamond selective nucleation based epitaxy

Jing Sheng Ma, Hiroyuki Yagyu, Akio Hiraki, Hiroshi Kawarada, Takao Yonehara

研究成果: Article査読

6 被引用数 (Scopus)

抄録

A uniform large area H2 plasma can be generated by a magneto-activated microwave plasma chemical vapour deposition (CVD) system. This plasma has been employed, instead of the previously used argon beam, in the diamond selective nucleation based epitaxy (SENTAXY) technique as the irradiation beam to fabricate a large area SENTAXY diamond array which has high potential to make good use of CVD diamond in semiconducting and optical devices. By using this nucleation control technique, an investigation focusing on CVD diamond nucleation sites has also been carried out via an ultrahigh voltage transmission electron microscope. It has been found that diamond preferentially nucleates on the area of the substrate with a high density of defects.

本文言語English
ページ(範囲)192-197
ページ数6
ジャーナルThin Solid Films
206
1-2
DOI
出版ステータスPublished - 1991 12 10

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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