Large-area synthesis of highly crystalline WSe2 monolayers and device applications

Jing Kai Huang, Jiang Pu, Chang Lung Hsu, Ming Hui Chiu, Zhen Yu Juang, Yung Huang Chang, Wen Hao Chang, Yoshihiro Iwasa, Taishi Takenobu, Lain Jong Li

    研究成果: Article査読

    652 被引用数 (Scopus)

    抄録

    The monolayer transition metal dichalcogenides have recently attracted much attention owing to their potential in valleytronics, flexible and low-power electronics, and optoelectronic devices. Recent reports have demonstrated the growth of large-size two-dimensional MoS2 layers by the sulfurization of molybdenum oxides. However, the growth of a transition metal selenide monolayer has still been a challenge. Here we report that the introduction of hydrogen in the reaction chamber helps to activate the selenization of WO 3, where large-size WSe2 monolayer flakes or thin films can be successfully grown. The top-gated field-effect transistors based on WSe2 monolayers using ionic gels as the dielectrics exhibit ambipolar characteristics, where the hole and electron mobility values are up to 90 and 7 cm2/Vs, respectively. These films can be transferred onto arbitrary substrates, which may inspire research efforts to explore their properties and applications. The resistor-loaded inverter based on a WSe2 film, with a gain of ∼13, further demonstrates its applicability for logic-circuit integrations.

    本文言語English
    ページ(範囲)923-930
    ページ数8
    ジャーナルACS Nano
    8
    1
    DOI
    出版ステータスPublished - 2014 1 28

    ASJC Scopus subject areas

    • 工学(全般)
    • 材料科学(全般)
    • 物理学および天文学(全般)

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