Large-area WSe<inf>2</inf> electric double layer transistors on a plastic substrate

Kazuma Funahashi, Jiang Pu, Ming Yang Li, Lain Jong Li, Yoshihiro Iwasa, Taishi Takenobu

    研究成果: Article査読

    9 被引用数 (Scopus)

    抄録

    Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe<inf>2</inf> monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe<inf>2</inf> films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼10<sup>4</sup>, demonstrating chemically grown WSe<inf>2</inf> transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices.

    本文言語English
    論文番号06FF06
    ジャーナルJapanese Journal of Applied Physics
    54
    6
    DOI
    出版ステータスPublished - 2015 6月 1

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(全般)

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