Large GaN p-n junction diodes of 3 mm in diameter on free-standing GaN substrates with high breakdown voltage

Kazuki Nomoto, Tohru Nakamura, Naoki Kaneda, Toshihiro Kawano, Tadayoshi Tsuchiya, Tomoyoshi Mishima

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

This report describes the first fabrication of GaN p-n junction diodes on free-standing GaN substrates with a 3mm diameter. For the diode of 3 mm in diameter, the specific on-resistance and the breakdown voltage was 124 mΩ·cm2 (at 4.0 V) and -450 V, respectively. Consequently, combination of materials used and device processing revealed a record fabricated device size with a high breakdown voltage and low forward leakage current in GaN vertical diodes.

本文言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2011, ICSCRM 2011
編集者Robert P. Devaty, Michael Dudley, T. Paul Chow, Philip G. Neudeck
出版社Trans Tech Publications Ltd
ページ1299-1302
ページ数4
ISBN(印刷版)9783037854198
DOI
出版ステータスPublished - 2012 1 1
外部発表はい
イベント14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
継続期間: 2011 9 112011 9 16

出版物シリーズ

名前Materials Science Forum
717-720
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
国/地域United States
CityCleveland, OH
Period11/9/1111/9/16

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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