Large GaN p-n junction diodes of 3 mm in diameter on free-standing GaN substrates with high breakdown voltage

Kazuki Nomoto, Tohru Nakamura, Naoki Kaneda, Toshihiro Kawano, Tadayoshi Tsuchiya, Tomoyoshi Mishima

研究成果: Conference contribution

1 引用 (Scopus)

抜粋

This report describes the first fabrication of GaN p-n junction diodes on free-standing GaN substrates with a 3mm diameter. For the diode of 3 mm in diameter, the specific on-resistance and the breakdown voltage was 124 mΩ·cm2 (at 4.0 V) and -450 V, respectively. Consequently, combination of materials used and device processing revealed a record fabricated device size with a high breakdown voltage and low forward leakage current in GaN vertical diodes.

元の言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2011, ICSCRM 2011
編集者Robert P. Devaty, Michael Dudley, T. Paul Chow, Philip G. Neudeck
出版者Trans Tech Publications Ltd
ページ1299-1302
ページ数4
ISBN(印刷物)9783037854198
DOI
出版物ステータスPublished - 2012 1 1
外部発表Yes
イベント14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
継続期間: 2011 9 112011 9 16

出版物シリーズ

名前Materials Science Forum
717-720
ISSN(印刷物)0255-5476
ISSN(電子版)1662-9752

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
United States
Cleveland, OH
期間11/9/1111/9/16

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • これを引用

    Nomoto, K., Nakamura, T., Kaneda, N., Kawano, T., Tsuchiya, T., & Mishima, T. (2012). Large GaN p-n junction diodes of 3 mm in diameter on free-standing GaN substrates with high breakdown voltage. : R. P. Devaty, M. Dudley, T. P. Chow, & P. G. Neudeck (版), Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 1299-1302). (Materials Science Forum; 巻数 717-720). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.717-720.1299