An InAs/GaAs in-plane strained superlattice (IPSSL) grown by molecular beam epitaxy (MBE) is investigated using photoluminescence (PL) measurements. The polarization-dependent PL at 0.77 eV (77 K) with a full width at half maximum of 25 meV indicates that a laterally modulated structure is grown. With the use of the empirical nearest-neighbor sp3s* tight-binding energy band calculation for the IPSSL, we deduced that an In0.74Ga0.74As/ In0.26Ga0.74As IPSSL was actually grown. This reveals that an indium composition modulation ∆x of about 0.48 was achieved, which is more than twice as large as that in in-plane superlattices using other material systems.
ASJC Scopus subject areas