Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In0.8Ga0.2)Se2 spacer

S. Kasai, Y. K. Takahashi, P. H. Cheng, Ikhtiar, T. Ohkubo, K. Kondou, Y. Otani, S. Mitani, K. Hono

研究成果: Article査読

25 被引用数 (Scopus)

抄録

We investigated the structure and magneto-transport properties of magnetic junctions using a Co2Fe(Ga0.5Ge0.5) Heusler alloy as ferromagnetic electrodes and a Cu(In0.8Ga0.2)Se2 (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product (RA) values between 0.3 and 3 Ω μm2. Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.

本文言語English
論文番号032409
ジャーナルApplied Physics Letters
109
3
DOI
出版ステータスPublished - 2016 7 18
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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「Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In<sub>0.8</sub>Ga<sub>0.2</sub>)Se<sub>2</sub> spacer」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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