Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In0.75Ga0.25As/In0.75Al0.25As heterojunctions

Y. Sato, Tomohiro Kita, S. Gozu, S. Yamada

研究成果: Article

198 引用 (Scopus)

抄録

Amounts of spontaneous spin splittings were estimated from low-temperature magnetoresistances in two-dimensional electron gases created at In0.75Ga0.25As/In0.75Al0.25As heterojunctions under a gate bias. Typical sheet electron densities and mobilities in the raw wafers were ∼1.0×1012/cm2 and 2-5×105 cm2/V s at 1.5 K, respectively. A maximum spin-orbit coupling constant αzero of ∼30 (×10-12eV m) was obtained for the van der Pauw sample. In gated Hall-bar samples, a decrease in the αzero value with decreasing gate voltage (Vg) was first confirmed in a normal heterojunction. The main origin for such a large αzero, which is a few times larger than any previously reported, was found to be a structure-dependent so-called interface contribution in the Rashba term.

元の言語English
ページ(範囲)8017-8021
ページ数5
ジャーナルJournal of Applied Physics
89
発行部数12
DOI
出版物ステータスPublished - 2001 6 1
外部発表Yes

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electron gas
heterojunctions
electron mobility
wafers
orbits
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy(all)

これを引用

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abstract = "Amounts of spontaneous spin splittings were estimated from low-temperature magnetoresistances in two-dimensional electron gases created at In0.75Ga0.25As/In0.75Al0.25As heterojunctions under a gate bias. Typical sheet electron densities and mobilities in the raw wafers were ∼1.0×1012/cm2 and 2-5×105 cm2/V s at 1.5 K, respectively. A maximum spin-orbit coupling constant αzero of ∼30 (×10-12eV m) was obtained for the van der Pauw sample. In gated Hall-bar samples, a decrease in the αzero value with decreasing gate voltage (Vg) was first confirmed in a normal heterojunction. The main origin for such a large αzero, which is a few times larger than any previously reported, was found to be a structure-dependent so-called interface contribution in the Rashba term.",
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T1 - Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In0.75Ga0.25As/In0.75Al0.25As heterojunctions

AU - Sato, Y.

AU - Kita, Tomohiro

AU - Gozu, S.

AU - Yamada, S.

PY - 2001/6/1

Y1 - 2001/6/1

N2 - Amounts of spontaneous spin splittings were estimated from low-temperature magnetoresistances in two-dimensional electron gases created at In0.75Ga0.25As/In0.75Al0.25As heterojunctions under a gate bias. Typical sheet electron densities and mobilities in the raw wafers were ∼1.0×1012/cm2 and 2-5×105 cm2/V s at 1.5 K, respectively. A maximum spin-orbit coupling constant αzero of ∼30 (×10-12eV m) was obtained for the van der Pauw sample. In gated Hall-bar samples, a decrease in the αzero value with decreasing gate voltage (Vg) was first confirmed in a normal heterojunction. The main origin for such a large αzero, which is a few times larger than any previously reported, was found to be a structure-dependent so-called interface contribution in the Rashba term.

AB - Amounts of spontaneous spin splittings were estimated from low-temperature magnetoresistances in two-dimensional electron gases created at In0.75Ga0.25As/In0.75Al0.25As heterojunctions under a gate bias. Typical sheet electron densities and mobilities in the raw wafers were ∼1.0×1012/cm2 and 2-5×105 cm2/V s at 1.5 K, respectively. A maximum spin-orbit coupling constant αzero of ∼30 (×10-12eV m) was obtained for the van der Pauw sample. In gated Hall-bar samples, a decrease in the αzero value with decreasing gate voltage (Vg) was first confirmed in a normal heterojunction. The main origin for such a large αzero, which is a few times larger than any previously reported, was found to be a structure-dependent so-called interface contribution in the Rashba term.

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