抄録
We have investigated the low-energy electronic state of boron-doped diamond thin film by the laser-excited photoemission spectroscopy. A clear Fermi-edge is observed for samples doped above the semiconductor-metal boundary, together with the characteristic structures at 150 × n meV possibly due to the strong electron-lattice coupling effect. In addition, for the superconducting sample, we observed a shift of the leading edge below Tc indicative of a superconducting gap opening. We discuss the electron-lattice coupling and the superconductivity in doped diamond.
本文言語 | English |
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ページ(範囲) | 17-21 |
ページ数 | 5 |
ジャーナル | Science and Technology of Advanced Materials |
巻 | 7 |
号 | SUPPL. 1 |
DOI | |
出版ステータス | Published - 2006 |
ASJC Scopus subject areas
- 材料科学(全般)