Lateral P-channel IGBT on SOI with Double Top RESURF Layers for Emitter Follower Type Complementary IGBT

ZIjian Zhang, Okita Kazuki, Ting Kong, Zijian Feng, Suyang Liu, Masahide Inuishi

研究成果: Conference contribution

抄録

This study introduces a new simple double layers RESURF structure for lateral IGBT on SOI which can achieve good SOA and satisfy good switching characteristics in half bridge inverter consisting of an emitter follower type complementary lateral IGBT(EF-CLIGBT) on SOI without complicated dead time setting to avoid the penetration current. The study especially focuses on the improvement of SOA for a p-channel LIGBT due to the difficulty in securing sufficient SOA in comparison with an n-channel LIGBT. The proposed structure can achieve sufficient forward blocking voltage as well as switching characteristics by avoiding the channel pinch-off caused by the junction between the N top RESURF and the P-drift layer. As a result, it is verified that the EF-CLIGBT leg can operate the half bridge inverter successfully without the through current.

本文言語English
ホスト出版物のタイトル2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
出版社Institute of Electrical and Electronics Engineers Inc.
ページ153-156
ページ数4
ISBN(電子版)9781665422017
DOI
出版ステータスPublished - 2022
イベント34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022 - Vancouver, Canada
継続期間: 2022 5月 222022 5月 25

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2022-May
ISSN(印刷版)1063-6854

Conference

Conference34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
国/地域Canada
CityVancouver
Period22/5/2222/5/25

ASJC Scopus subject areas

  • 工学(全般)

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