Lattice relaxation of GaAs islands grown on Si(100) substrate

Koyu Asai, Kazuhito Kamei, Hisashi Katahama

研究成果: Article

11 引用 (Scopus)

抄録

The lattice relaxation of GaAs islands grown on Si(100) substrates are studied by combining reflection high-energy electron diffraction and molecular beam epitaxy. At the beginning of the growth, rapid increase of substrate surface and large Poisson's ratios are observed. This increase can be attributed to the surface effects of islands.

元の言語English
ページ(範囲)701-703
ページ数3
ジャーナルApplied Physics Letters
71
発行部数5
DOI
出版物ステータスPublished - 1997 8 4
外部発表Yes

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Poisson ratio
high energy electrons
molecular beam epitaxy
electron diffraction

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

Lattice relaxation of GaAs islands grown on Si(100) substrate. / Asai, Koyu; Kamei, Kazuhito; Katahama, Hisashi.

:: Applied Physics Letters, 巻 71, 番号 5, 04.08.1997, p. 701-703.

研究成果: Article

Asai, Koyu ; Kamei, Kazuhito ; Katahama, Hisashi. / Lattice relaxation of GaAs islands grown on Si(100) substrate. :: Applied Physics Letters. 1997 ; 巻 71, 番号 5. pp. 701-703.
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