抄録
We demonstrate that hexagonal boron nitride (h-BN) can work as a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. We illustrate the potential versatility of this approach by growing an AlGaN/GaN heterostructure, an InGaN/GaN multiple-quantum-well (MQW) structure, and a multiple-quantum-well light-emitting diode on h-BN-buffered sapphire substrates. These device structures, ranging in area from five millimeters square to two centimeters square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.
本文言語 | English |
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ホスト出版物のタイトル | 2014 Silicon Nanoelectronics Workshop, SNW 2014 |
出版社 | Institute of Electrical and Electronics Engineers Inc. |
ISBN(印刷版) | 9781479956777 |
DOI | |
出版ステータス | Published - 2015 12月 4 |
イベント | Silicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States 継続期間: 2014 6月 8 → 2014 6月 9 |
Other
Other | Silicon Nanoelectronics Workshop, SNW 2014 |
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国/地域 | United States |
City | Honolulu |
Period | 14/6/8 → 14/6/9 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 電子工学および電気工学