Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto

    研究成果: Conference contribution

    抄録

    We demonstrate that hexagonal boron nitride (h-BN) can work as a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. We illustrate the potential versatility of this approach by growing an AlGaN/GaN heterostructure, an InGaN/GaN multiple-quantum-well (MQW) structure, and a multiple-quantum-well light-emitting diode on h-BN-buffered sapphire substrates. These device structures, ranging in area from five millimeters square to two centimeters square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.

    本文言語English
    ホスト出版物のタイトル2014 Silicon Nanoelectronics Workshop, SNW 2014
    出版社Institute of Electrical and Electronics Engineers Inc.
    ISBN(印刷版)9781479956777
    DOI
    出版ステータスPublished - 2015 12 4
    イベントSilicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States
    継続期間: 2014 6 82014 6 9

    Other

    OtherSilicon Nanoelectronics Workshop, SNW 2014
    国/地域United States
    CityHonolulu
    Period14/6/814/6/9

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 電子工学および電気工学

    フィンガープリント

    「Layered boron nitride as a release layer for mechanical transfer of GaN-based devices」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル