Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Yasuyuki Kobayashi; Kazuhide Kumakura; Tetsuya Akasaka; Hideki Yamamoto; Toshiki Makimoto

doi:10.1109/SNW.2014.7348536

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto

研究成果: Conference contribution

抄録

We demonstrate that hexagonal boron nitride (h-BN) can work as a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. We illustrate the potential versatility of this approach by growing an AlGaN/GaN heterostructure, an InGaN/GaN multiple-quantum-well (MQW) structure, and a multiple-quantum-well light-emitting diode on h-BN-buffered sapphire substrates. These device structures, ranging in area from five millimeters square to two centimeters square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.

本文言語	English
ホスト出版物のタイトル	2014 Silicon Nanoelectronics Workshop, SNW 2014
出版社	Institute of Electrical and Electronics Engineers Inc.
ISBN（印刷版）	9781479956777
DOI	https://doi.org/10.1109/SNW.2014.7348536
出版ステータス	Published - 2015 12 4
イベント	Silicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States 継続期間: 2014 6 8 → 2014 6 9

Other

Other	Silicon Nanoelectronics Workshop, SNW 2014
国/地域	United States
City	Honolulu
Period	14/6/8 → 14/6/9

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

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10.1109/SNW.2014.7348536

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引用スタイル

Kobayashi, Y, Kumakura, K, Akasaka, T, Yamamoto, H & Makimoto, T 2015, Layered boron nitride as a release layer for mechanical transfer of GaN-based devices. in 2014 Silicon Nanoelectronics Workshop, SNW 2014., 7348536, Institute of Electrical and Electronics Engineers Inc., Silicon Nanoelectronics Workshop, SNW 2014, Honolulu, United States, 14/6/8. https://doi.org/10.1109/SNW.2014.7348536

@inproceedings{e11d2ff16df3406d860030c5860aaf1b,

title = "Layered boron nitride as a release layer for mechanical transfer of GaN-based devices",

abstract = "We demonstrate that hexagonal boron nitride (h-BN) can work as a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. We illustrate the potential versatility of this approach by growing an AlGaN/GaN heterostructure, an InGaN/GaN multiple-quantum-well (MQW) structure, and a multiple-quantum-well light-emitting diode on h-BN-buffered sapphire substrates. These device structures, ranging in area from five millimeters square to two centimeters square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.",

author = "Yasuyuki Kobayashi and Kazuhide Kumakura and Tetsuya Akasaka and Hideki Yamamoto and Toshiki Makimoto",

year = "2015",

month = dec,

day = "4",

doi = "10.1109/SNW.2014.7348536",

language = "English",

isbn = "9781479956777",

booktitle = "2014 Silicon Nanoelectronics Workshop, SNW 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Silicon Nanoelectronics Workshop, SNW 2014 ; Conference date: 08-06-2014 Through 09-06-2014",

}

TY - GEN

T1 - Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

AU - Kobayashi, Yasuyuki

AU - Kumakura, Kazuhide

AU - Akasaka, Tetsuya

AU - Yamamoto, Hideki

AU - Makimoto, Toshiki

PY - 2015/12/4

Y1 - 2015/12/4

N2 - We demonstrate that hexagonal boron nitride (h-BN) can work as a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. We illustrate the potential versatility of this approach by growing an AlGaN/GaN heterostructure, an InGaN/GaN multiple-quantum-well (MQW) structure, and a multiple-quantum-well light-emitting diode on h-BN-buffered sapphire substrates. These device structures, ranging in area from five millimeters square to two centimeters square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.

AB - We demonstrate that hexagonal boron nitride (h-BN) can work as a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. We illustrate the potential versatility of this approach by growing an AlGaN/GaN heterostructure, an InGaN/GaN multiple-quantum-well (MQW) structure, and a multiple-quantum-well light-emitting diode on h-BN-buffered sapphire substrates. These device structures, ranging in area from five millimeters square to two centimeters square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.

UR - http://www.scopus.com/inward/record.url?scp=84963877985&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84963877985&partnerID=8YFLogxK

U2 - 10.1109/SNW.2014.7348536

DO - 10.1109/SNW.2014.7348536

M3 - Conference contribution

AN - SCOPUS:84963877985

SN - 9781479956777

BT - 2014 Silicon Nanoelectronics Workshop, SNW 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Silicon Nanoelectronics Workshop, SNW 2014

Y2 - 8 June 2014 through 9 June 2014

ER -

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

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