TY - GEN
T1 - LIFETIME CONTROL BY OXIDE PRECIPITATES.
AU - Ohtaki, R.
AU - Matsushita, Y.
AU - Tajima, M.
N1 - Copyright:
Copyright 2004 Elsevier B.V., All rights reserved.
PY - 1985
Y1 - 1985
N2 - Relationship between oxide precipitates, which are one of the important microdefects in typical CZ Si wafers, and a minority carrier recombination lifetime was studied in detail. It was found that the critical size of the oxide precipitates, which act as lifetime killers, is approximately 200-300 A in diameter, and that the lifetime is a strong function of the density of precipitates. If the size is smaller than the critical size, precipitates will not work as lifetime killers, no matter how high their density is. Furthermore, it was found that the annealing at 450 degree C for 64 hours produces a new deep level, which makes the lifetime remarkably small.
AB - Relationship between oxide precipitates, which are one of the important microdefects in typical CZ Si wafers, and a minority carrier recombination lifetime was studied in detail. It was found that the critical size of the oxide precipitates, which act as lifetime killers, is approximately 200-300 A in diameter, and that the lifetime is a strong function of the density of precipitates. If the size is smaller than the critical size, precipitates will not work as lifetime killers, no matter how high their density is. Furthermore, it was found that the annealing at 450 degree C for 64 hours produces a new deep level, which makes the lifetime remarkably small.
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M3 - Conference contribution
AN - SCOPUS:0021859041
SN - 0895204851
SP - 571
EP - 577
BT - Unknown Host Publication Title
PB - Metallurgical Soc of AIME
ER -