Light-transmitting two-dimensional photodetector array using a-Si pin photodiodes and poly-Si TFT's integrated on a transparent substrate

Masamichi Okamura*, Kazuo Kimura, Seiiti Shirai, Noriyoshi Yamauchi

*この研究の対応する著者

研究成果: Article査読

11 被引用数 (Scopus)

抄録

A light-transmitting two-dimensional photodetector array (32×32 cells) using amorphous silicon (a-Si) pin photodiodes and polysilicon (poly-Si) thin film transistors (TFT's) integrated on a transparent substrate has been developed for use in a free-space optical switching network. The fabrication and the characteristics of the photodetector array are discussed. With driving circuits and sensing amplifiers, this photodetector array shows a minimum detectable power of -25 dBm and an insertion loss of 0.4 dB for an incident optical beam with a diameter of 550 μm. By monitoring the positions and the states of input optical beams, this photodetector array can be used to control the optical paths in photonic switching systems, such as a 1024-input-port optical concentrator.

本文言語English
ページ(範囲)180-185
ページ数6
ジャーナルIEEE Transactions on Electron Devices
41
2
DOI
出版ステータスPublished - 1994 2月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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