Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques

S. F. Chichibu, A. Uedono, T. Onuma, Takayuki Sota, B. A. Haskell, S. P. Denbaars, J. S. Speck, S. Nakamura

    研究成果: Article

    100 引用 (Scopus)

    抄録

    Room-temperature nonradiative lifetime (τnr) of the near-band-edge excitonic photoluminescence (PL) peak in {0001} polar, (11 2̄0), (1 1̄ 00), and (001) nonpolar GaN was shown to increase with the decrease in density or size of Ga vacancies (VGa) and with the decrease in gross density of point defects including complexes, leading to the increase in the PL intensity. As the edge threading dislocation density decreased, density or size of VGa tended to decrease and τnr tended to increase. However, there existed remarkable exceptions. The results indicate that nonradiative recombination process is governed not by single point defects, but by certain defects introduced with the incorporation of VGa, such as VGa -defect complexes.

    元の言語English
    記事番号021914
    ジャーナルApplied Physics Letters
    86
    発行部数2
    DOI
    出版物ステータスPublished - 2005 1 10

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    positron annihilation
    photoluminescence
    life (durability)
    room temperature
    point defects
    defects
    edge dislocations

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    これを引用

    Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques. / Chichibu, S. F.; Uedono, A.; Onuma, T.; Sota, Takayuki; Haskell, B. A.; Denbaars, S. P.; Speck, J. S.; Nakamura, S.

    :: Applied Physics Letters, 巻 86, 番号 2, 021914, 10.01.2005.

    研究成果: Article

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    abstract = "Room-temperature nonradiative lifetime (τnr) of the near-band-edge excitonic photoluminescence (PL) peak in {0001} polar, (11 2̄0), (1 1̄ 00), and (001) nonpolar GaN was shown to increase with the decrease in density or size of Ga vacancies (VGa) and with the decrease in gross density of point defects including complexes, leading to the increase in the PL intensity. As the edge threading dislocation density decreased, density or size of VGa tended to decrease and τnr tended to increase. However, there existed remarkable exceptions. The results indicate that nonradiative recombination process is governed not by single point defects, but by certain defects introduced with the incorporation of VGa, such as VGa -defect complexes.",
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    AU - Chichibu, S. F.

    AU - Uedono, A.

    AU - Onuma, T.

    AU - Sota, Takayuki

    AU - Haskell, B. A.

    AU - Denbaars, S. P.

    AU - Speck, J. S.

    AU - Nakamura, S.

    PY - 2005/1/10

    Y1 - 2005/1/10

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    AB - Room-temperature nonradiative lifetime (τnr) of the near-band-edge excitonic photoluminescence (PL) peak in {0001} polar, (11 2̄0), (1 1̄ 00), and (001) nonpolar GaN was shown to increase with the decrease in density or size of Ga vacancies (VGa) and with the decrease in gross density of point defects including complexes, leading to the increase in the PL intensity. As the edge threading dislocation density decreased, density or size of VGa tended to decrease and τnr tended to increase. However, there existed remarkable exceptions. The results indicate that nonradiative recombination process is governed not by single point defects, but by certain defects introduced with the incorporation of VGa, such as VGa -defect complexes.

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