Linearity and low-noise performance of SOI MOSFETs for RF applications

Alberto O. Adan*, Toshihiko Yoshimasu, Shoichi Shitara, Noriyuki Tanba, Masayuki Fukumi

*この研究の対応する著者

研究成果: Article査読

73 被引用数 (Scopus)

抄録

The MOSFET parameters important for RF application at GHz frequencies: a) transition frequency, b) noise figure, and c) linearity are analyzed and correlated with substrate type. This work demonstrates that, without process changes, high-resistivity silicon-on-insulator (high-ρ SOI) substrates can successfully enhance the RF performance of on-chip inductors and fully depleted (FD)-SOI devices in terms of reducing substrate losses and parasitics. The linearity limitations of the SOI low-breakdown voltage and "kink" effect are addressed by judicious device and circuit design. Criteria for device optimization are derived. A N F = 1.7 dB at 2.5 GHz for a 0.25 μm FD-SOI low-noise amplifier (LNA) on high-ρ SOI substrate obtained the lowest noise figure for applications in the L and S-bands.

本文言語English
ページ(範囲)881-888
ページ数8
ジャーナルIEEE Transactions on Electron Devices
49
5
DOI
出版ステータスPublished - 2002 5 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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