Liquid phase epitaxy of 4H-SiC layers on on-axis PVT grown substrates

Kazuhiko Kusunoki*, Kazuhito Kamei, Nobuyoshi Yashiro, Ryo Hattori

*この研究の対応する著者

研究成果: Conference contribution

14 被引用数 (Scopus)

抄録

We performed liquid phase epitaxial growth of SiC layers on on-axis 4H-SiC substrates using Si solvent. It was found that the polytype controllability of the epilayer significantly depends on the growth process conditions. By optimizing them, polytype mixing in the epilayers can be completely suppressed. It is shown that the density of basal plane dislocations in the epilayers is much less than in the substrates due to on-axis growth. SIMS analysis showed that the concentrations of trace impurity elements (B,Al,Ti,V,Cr,Fe,Ni,P) in the epilayers are under lower detection limit. The only impurity is nitrogen resulting in an n-type layer. Carrier concentrations N d-N a ranging from high 10 16 to low 10 17cm -3 are achievable.

本文言語English
ホスト出版物のタイトルMaterials Science Forum
ページ137-140
ページ数4
615 617
DOI
出版ステータスPublished - 2009
外部発表はい
イベント7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 - Barcelona, Spain
継続期間: 2008 9月 72008 9月 11

出版物シリーズ

名前Materials Science Forum
615 617
ISSN(印刷版)02555476

Other

Other7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008
国/地域Spain
CityBarcelona
Period08/9/708/9/11

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 機械工学
  • 材料力学

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