Local environment of silicon in cubic boron nitride

Hidenobu Murata*, Takashi Taniguchi, Shunichi Hishita, Tomoyuki Yamamoto, Fumiyasu Oba, Isao Tanaka

*この研究の対応する著者

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Si-doped cubic boron nitride (c-BN) is synthesized at high pressure and high temperature, and the local environment of Si is investigated using X-ray absorption near edge structure (XANES) and first-principles calculations. Si-K XANES indicates that Si in c-BN is surrounded by four nitrogen atoms. According to first-principles calculations, the model for substitutional Si at the B site well reproduces experimental Si-K XANES, and it is energetically more favorable than substitutional Si at the N site. Both the present experimental and theoretical results indicate that Si in c-BN prefers the B site to the N site.

本文言語English
論文番号233502
ジャーナルJournal of Applied Physics
114
23
DOI
出版ステータスPublished - 2013 12月 21

ASJC Scopus subject areas

  • 物理学および天文学(全般)

フィンガープリント

「Local environment of silicon in cubic boron nitride」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル