抄録
Si-doped cubic boron nitride (c-BN) is synthesized at high pressure and high temperature, and the local environment of Si is investigated using X-ray absorption near edge structure (XANES) and first-principles calculations. Si-K XANES indicates that Si in c-BN is surrounded by four nitrogen atoms. According to first-principles calculations, the model for substitutional Si at the B site well reproduces experimental Si-K XANES, and it is energetically more favorable than substitutional Si at the N site. Both the present experimental and theoretical results indicate that Si in c-BN prefers the B site to the N site.
本文言語 | English |
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論文番号 | 233502 |
ジャーナル | Journal of Applied Physics |
巻 | 114 |
号 | 23 |
DOI | |
出版ステータス | Published - 2013 12月 21 |
ASJC Scopus subject areas
- 物理学および天文学(全般)