抄録
We have developed the local-field-enhancement model of the tail component of DRAM (dynamic random access memory) retention-time distribution. The model is in excellent agreement with experiments and proposes to control not the number but the energy-level distribution of traps and to reduce the space-charge-region-field variation together with the field itself to increase the retention time.
| 本文言語 | English |
|---|---|
| ホスト出版物のタイトル | Technical Digest - International Electron Devices Meeting |
| 編集者 | Anon |
| 出版社 | IEEE |
| ページ | 157-160 |
| ページ数 | 4 |
| 出版ステータス | Published - 1998 |
| 外部発表 | はい |
| イベント | Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA 継続期間: 1998 12月 6 → 1998 12月 9 |
Other
| Other | Proceedings of the 1998 IEEE International Electron Devices Meeting |
|---|---|
| City | San Francisco, CA, USA |
| Period | 98/12/6 → 98/12/9 |
ASJC Scopus subject areas
- 電子工学および電気工学