Indium K-edge EXAFS measurements were carried out to study local structures around In atoms in InxGa1-xN multi-quantum-well (MQW) structures of 10 periods with In0.2Ga0.8N (2.5 nm) and In0.05Ga0.95N (7.5 nm). We found the following: (1) Debye-Waller factors for In-In and In-Ga atomic pairs in MQW are smaller than those in single QW (SQW) InxGa1-xN. (2) The differences in the interatomic distances of In-In and In-Ga between the horizontal and vertical direction are small. These results indicate that the strain in the InxGa1-xN layer is reduced in MQW in comparison to SQW. (3) In atoms are randomly distributed in both the horizontal and vertical directions of the sample.