Local Zener phenomenon. A mechanism of p-n junction leakage current

Kiyonori Ohyu*, Atsushi Hiraiwa

*この研究の対応する著者

研究成果: Conference contribution

9 被引用数 (Scopus)

抄録

The origin of the extremely large p-n junction leakage current which is due neither to generation-recombination current nor diffusion current is investigated. It is shown to be due to the local Zener effect, induced by the local enhancement of the electric field around precipitates in the depletion layer. A new approach to suppress this Zener effect by controlling the profile of the electric field is also proposed.

本文言語English
ホスト出版物のタイトルConference on Solid State Devices and Materials
Place of PublicationTokyo, Japan
出版社Publ by Business Cent for Acad Soc Japan
ページ73-75
ページ数3
出版ステータスPublished - 1992
外部発表はい
イベントExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
継続期間: 1992 8月 261992 8月 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

ASJC Scopus subject areas

  • 工学(全般)

フィンガープリント

「Local Zener phenomenon. A mechanism of p-n junction leakage current」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル