Localized and free exciton spin relaxation dynamics in GaInNAsGaAs quantum well

S. L. Lu, L. F. Bian, M. Uesugi, H. Nosho, A. Tackeuchi, Z. C. Niu

研究成果: Article査読

7 被引用数 (Scopus)

抄録

We have investigated the exciton spin relaxation in a GaInNAsGaAs quantum well. The recombination from free and localized excitons is resolved on the basis of an analysis of the photoluminescence characteristics. The free exciton spin relaxation time is measured to be 192 ps at 10 K, while the localized exciton spin relaxation time is one order of magnitude longer than that of the free exciton. The dependence of the free exciton spin relaxation time on the temperature above 50 K suggests that both the D'yakonov-Perel' and the Elliot-Yafet effects dominate the spin relaxation process. The temperature independence below 50 K is considered to be due to the spin exchange interaction. The ultralong spin relaxation time of the localized excitons is explained to be due to the influence of nonradiative deep centers.

本文言語English
論文番号051908
ジャーナルApplied Physics Letters
92
5
DOI
出版ステータスPublished - 2008 2 15

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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