Localized and mixed valence state of Ce 4f in superconducting and ferromagnetic CeO1-x FxBiS2 revealed by x-ray absorption and photoemission spectroscopy

T. Sugimoto, D. Ootsuki, E. Paris, A. Iadecola, M. Salome, E. F. Schwier, H. Iwasawa, K. Shimada, T. Asano, R. Higashinaka, T. D. Matsuda, Y. Aoki, N. L. Saini, Takashi Mizokawa

    研究成果: Article

    12 引用 (Scopus)

    抄録

    We have performed Ce L3-edge x-ray absorption spectroscopy (XAS) and Ce 4d-4f resonant photoemission spectroscopy (PES) on single crystals of CeO1-xFxBiS2 for x=0.0 and 0.5 in order to investigate the Ce 4f electronic states. In Ce L3-edge XAS, a mixed valence of Ce was found in the x=0.0 sample, and F doping suppressed it, which is consistent with the results on polycrystalline samples. As for resonant PES, we found that the Ce 4f electrons in both x=0.0 and 0.5 systems respectively formed a flat band at 1.0 and 1.4 eV below the Fermi level and there was no contribution to the Fermi surfaces. Interestingly, Ce valence in CeOBiS2 deviates from Ce3+ even though Ce 4f electrons are localized, indicating the Ce valence is not in a typical valence fluctuation regime. We assume that localized Ce 4f in CeOBiS2 is mixed with unoccupied Bi 6pz, which is consistent with a previous local structural study. Based on the analysis of the Ce L3-edge XAS spectra using Anderson's impurity model calculation, we found that the transfer integral becomes smaller, increasing the number of Ce 4f electrons upon the F substitution for O.

    元の言語English
    記事番号081106
    ジャーナルPhysical Review B - Condensed Matter and Materials Physics
    94
    発行部数8
    DOI
    出版物ステータスPublished - 2016 8 17

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    Photoelectron spectroscopy
    Absorption spectroscopy
    x ray absorption
    x ray spectroscopy
    absorption spectroscopy
    photoelectric emission
    valence
    X rays
    Electrons
    spectroscopy
    Fermi surface
    Electronic states
    Fermi level
    electrons
    Substitution reactions
    Doping (additives)
    Single crystals
    Impurities
    Fermi surfaces
    substitutes

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

    これを引用

    Localized and mixed valence state of Ce 4f in superconducting and ferromagnetic CeO1-x FxBiS2 revealed by x-ray absorption and photoemission spectroscopy. / Sugimoto, T.; Ootsuki, D.; Paris, E.; Iadecola, A.; Salome, M.; Schwier, E. F.; Iwasawa, H.; Shimada, K.; Asano, T.; Higashinaka, R.; Matsuda, T. D.; Aoki, Y.; Saini, N. L.; Mizokawa, Takashi.

    :: Physical Review B - Condensed Matter and Materials Physics, 巻 94, 番号 8, 081106, 17.08.2016.

    研究成果: Article

    Sugimoto, T, Ootsuki, D, Paris, E, Iadecola, A, Salome, M, Schwier, EF, Iwasawa, H, Shimada, K, Asano, T, Higashinaka, R, Matsuda, TD, Aoki, Y, Saini, NL & Mizokawa, T 2016, 'Localized and mixed valence state of Ce 4f in superconducting and ferromagnetic CeO1-x FxBiS2 revealed by x-ray absorption and photoemission spectroscopy', Physical Review B - Condensed Matter and Materials Physics, 巻. 94, 番号 8, 081106. https://doi.org/10.1103/PhysRevB.94.081106
    Sugimoto, T. ; Ootsuki, D. ; Paris, E. ; Iadecola, A. ; Salome, M. ; Schwier, E. F. ; Iwasawa, H. ; Shimada, K. ; Asano, T. ; Higashinaka, R. ; Matsuda, T. D. ; Aoki, Y. ; Saini, N. L. ; Mizokawa, Takashi. / Localized and mixed valence state of Ce 4f in superconducting and ferromagnetic CeO1-x FxBiS2 revealed by x-ray absorption and photoemission spectroscopy. :: Physical Review B - Condensed Matter and Materials Physics. 2016 ; 巻 94, 番号 8.
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    title = "Localized and mixed valence state of Ce 4f in superconducting and ferromagnetic CeO1-x FxBiS2 revealed by x-ray absorption and photoemission spectroscopy",
    abstract = "We have performed Ce L3-edge x-ray absorption spectroscopy (XAS) and Ce 4d-4f resonant photoemission spectroscopy (PES) on single crystals of CeO1-xFxBiS2 for x=0.0 and 0.5 in order to investigate the Ce 4f electronic states. In Ce L3-edge XAS, a mixed valence of Ce was found in the x=0.0 sample, and F doping suppressed it, which is consistent with the results on polycrystalline samples. As for resonant PES, we found that the Ce 4f electrons in both x=0.0 and 0.5 systems respectively formed a flat band at 1.0 and 1.4 eV below the Fermi level and there was no contribution to the Fermi surfaces. Interestingly, Ce valence in CeOBiS2 deviates from Ce3+ even though Ce 4f electrons are localized, indicating the Ce valence is not in a typical valence fluctuation regime. We assume that localized Ce 4f in CeOBiS2 is mixed with unoccupied Bi 6pz, which is consistent with a previous local structural study. Based on the analysis of the Ce L3-edge XAS spectra using Anderson's impurity model calculation, we found that the transfer integral becomes smaller, increasing the number of Ce 4f electrons upon the F substitution for O.",
    author = "T. Sugimoto and D. Ootsuki and E. Paris and A. Iadecola and M. Salome and Schwier, {E. F.} and H. Iwasawa and K. Shimada and T. Asano and R. Higashinaka and Matsuda, {T. D.} and Y. Aoki and Saini, {N. L.} and Takashi Mizokawa",
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    T1 - Localized and mixed valence state of Ce 4f in superconducting and ferromagnetic CeO1-x FxBiS2 revealed by x-ray absorption and photoemission spectroscopy

    AU - Sugimoto, T.

    AU - Ootsuki, D.

    AU - Paris, E.

    AU - Iadecola, A.

    AU - Salome, M.

    AU - Schwier, E. F.

    AU - Iwasawa, H.

    AU - Shimada, K.

    AU - Asano, T.

    AU - Higashinaka, R.

    AU - Matsuda, T. D.

    AU - Aoki, Y.

    AU - Saini, N. L.

    AU - Mizokawa, Takashi

    PY - 2016/8/17

    Y1 - 2016/8/17

    N2 - We have performed Ce L3-edge x-ray absorption spectroscopy (XAS) and Ce 4d-4f resonant photoemission spectroscopy (PES) on single crystals of CeO1-xFxBiS2 for x=0.0 and 0.5 in order to investigate the Ce 4f electronic states. In Ce L3-edge XAS, a mixed valence of Ce was found in the x=0.0 sample, and F doping suppressed it, which is consistent with the results on polycrystalline samples. As for resonant PES, we found that the Ce 4f electrons in both x=0.0 and 0.5 systems respectively formed a flat band at 1.0 and 1.4 eV below the Fermi level and there was no contribution to the Fermi surfaces. Interestingly, Ce valence in CeOBiS2 deviates from Ce3+ even though Ce 4f electrons are localized, indicating the Ce valence is not in a typical valence fluctuation regime. We assume that localized Ce 4f in CeOBiS2 is mixed with unoccupied Bi 6pz, which is consistent with a previous local structural study. Based on the analysis of the Ce L3-edge XAS spectra using Anderson's impurity model calculation, we found that the transfer integral becomes smaller, increasing the number of Ce 4f electrons upon the F substitution for O.

    AB - We have performed Ce L3-edge x-ray absorption spectroscopy (XAS) and Ce 4d-4f resonant photoemission spectroscopy (PES) on single crystals of CeO1-xFxBiS2 for x=0.0 and 0.5 in order to investigate the Ce 4f electronic states. In Ce L3-edge XAS, a mixed valence of Ce was found in the x=0.0 sample, and F doping suppressed it, which is consistent with the results on polycrystalline samples. As for resonant PES, we found that the Ce 4f electrons in both x=0.0 and 0.5 systems respectively formed a flat band at 1.0 and 1.4 eV below the Fermi level and there was no contribution to the Fermi surfaces. Interestingly, Ce valence in CeOBiS2 deviates from Ce3+ even though Ce 4f electrons are localized, indicating the Ce valence is not in a typical valence fluctuation regime. We assume that localized Ce 4f in CeOBiS2 is mixed with unoccupied Bi 6pz, which is consistent with a previous local structural study. Based on the analysis of the Ce L3-edge XAS spectra using Anderson's impurity model calculation, we found that the transfer integral becomes smaller, increasing the number of Ce 4f electrons upon the F substitution for O.

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