Localized exciton dynamics in nonpolar (11 2- 0) InxGa 1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

T. Onuma, A. Chakraborty, B. A. Haskell, S. Keller, S. P. Denbaars, J. S. Speck, S. Nakamura, U. K. Mishra, T. Sota, S. F. Chichibu*

*この研究の対応する著者

研究成果: Article査読

58 被引用数 (Scopus)

抄録

Beneficial effects of the localized excitons were confirmed in nonpolar (11 2- 0) Inx Ga1-x N multiple quantum wells (QWs) grown on GaN templates prepared by lateral epitaxial overgrowth. Due to the absence of the polarization fields normal to the QW plane, the photoluminescence (PL) peak energy moderately shifted to the higher energy and the radiative lifetime did not change remarkably with the decrease in the well thickness. Similar to the case for polar InGaN QWs, time-resolved PL signals exhibited the nonexponential decay shape, which can be explained by thermalization and subsequent localization of excitons. Although the growth conditions were not fully optimized, values of the PL intensity at 300 K divided by that at 8 K were 25% and 17% for the peaks at 2.92 and 2.60 eV, respectively.

本文言語English
論文番号151918
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
86
15
DOI
出版ステータスPublished - 2005 7 4

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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「Localized exciton dynamics in nonpolar (11 2- 0) In<sub>x</sub>Ga <sub>1-x</sub>N multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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