Localized excitons in an In0.06Ga0.94N multiple-quantum-well laser diode lased at 400 nm

Shigefusa F. Chichibu, Takashi Azuhata, Takayuki Sota, Takashi Mukai

研究成果: Article

25 引用 (Scopus)

抜粋

In case of wells and barriers, an InGaN multiple-quantum-well laser was shown to have InN mole fraction of 6% and 2%. Localization depth and Stokes-like shift (SS) were estimated to be 49 and 35 meV at 300 K. Due to the large band-gap bowing and In clustering, the quantum-well exciton localization was considered to be an intrinsic phenomenon in InGaN. In the density of states, the spontaneous emission was due to the recombination of excitons localized at the exponential tail-type potential minima.

元の言語English
ページ(範囲)341-343
ページ数3
ジャーナルApplied Physics Letters
79
発行部数3
DOI
出版物ステータスPublished - 2001 7 16

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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