Localized excitons in InGaN

S. Chichibu, T. Deguchi, Takayuki Sota, K. Wada, S. Nakamura

研究成果: Conference contribution

5 引用 (Scopus)

抄録

Emission mechanisms of the device-quality quantum well (QW) structure and bulk three dimensional InGaN materials grown on sapphire substrates without any epitaxial layer overgrown GaN base layers were investigated. The In xGa 1-xN layers showed various degree of spatial potential (bandgap) fluctuation produced by some kinetic driving forces initiated by the threading dislocations or growth steps during the growth. The degree of fluctuation changed remarkably around nominal InN molar fraction x = 0.2, which changes to nearly 8-10% for the strained In xGa 1-xN. This potential fluctuation induces energy tail states both in QW and three dimensional InGaN.

元の言語English
ホスト出版物のタイトルMaterials Research Society Symposium - Proceedings
編集者S.R. Phillpot, P.D. Bristowe, D.G. Stroud, J.R. Smith
出版者MRS
ページ613-624
ページ数12
482
出版物ステータスPublished - 1997
外部発表Yes
イベントProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
継続期間: 1997 12 11997 12 4

Other

OtherProceedings of the 1997 MRS Fall Meeting
Boston, MA, USA
期間97/12/197/12/4

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Excitons
Semiconductor quantum wells
Aluminum Oxide
Epitaxial layers
Sapphire
Energy gap
Kinetics
Substrates
LDS 751

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

これを引用

Chichibu, S., Deguchi, T., Sota, T., Wada, K., & Nakamura, S. (1997). Localized excitons in InGaN. : S. R. Phillpot, P. D. Bristowe, D. G. Stroud, & J. R. Smith (版), Materials Research Society Symposium - Proceedings (巻 482, pp. 613-624). MRS.

Localized excitons in InGaN. / Chichibu, S.; Deguchi, T.; Sota, Takayuki; Wada, K.; Nakamura, S.

Materials Research Society Symposium - Proceedings. 版 / S.R. Phillpot; P.D. Bristowe; D.G. Stroud; J.R. Smith. 巻 482 MRS, 1997. p. 613-624.

研究成果: Conference contribution

Chichibu, S, Deguchi, T, Sota, T, Wada, K & Nakamura, S 1997, Localized excitons in InGaN. : SR Phillpot, PD Bristowe, DG Stroud & JR Smith (版), Materials Research Society Symposium - Proceedings. 巻. 482, MRS, pp. 613-624, Proceedings of the 1997 MRS Fall Meeting, Boston, MA, USA, 97/12/1.
Chichibu S, Deguchi T, Sota T, Wada K, Nakamura S. Localized excitons in InGaN. : Phillpot SR, Bristowe PD, Stroud DG, Smith JR, 編集者, Materials Research Society Symposium - Proceedings. 巻 482. MRS. 1997. p. 613-624
Chichibu, S. ; Deguchi, T. ; Sota, Takayuki ; Wada, K. ; Nakamura, S. / Localized excitons in InGaN. Materials Research Society Symposium - Proceedings. 編集者 / S.R. Phillpot ; P.D. Bristowe ; D.G. Stroud ; J.R. Smith. 巻 482 MRS, 1997. pp. 613-624
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