Localized excitons in InGaN

S. Chichibu, T. Deguchi, T. Sota, K. Wada, S. Nakamura

研究成果: Conference article

5 引用 (Scopus)

抜粋

Emission mechanisms of the device-quality quantum well (QW) structure and bulk three dimensional InGaN materials grown on sapphire substrates without any epitaxial layer overgrown GaN base layers were investigated. The InxGa1-xN layers showed various degree of spatial potential (bandgap) fluctuation produced by some kinetic driving forces initiated by the threading dislocations or growth steps during the growth. The degree of fluctuation changed remarkably around nominal InN molar fraction x = 0.2, which changes to nearly 8-10% for the strained InxGa1-xN. This potential fluctuation induces energy tail states both in QW and three dimensional InGaN.

元の言語English
ページ(範囲)613-624
ページ数12
ジャーナルMaterials Research Society Symposium - Proceedings
482
出版物ステータスPublished - 1997 12 1
外部発表Yes
イベントProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
継続期間: 1997 12 11997 12 4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • これを引用

    Chichibu, S., Deguchi, T., Sota, T., Wada, K., & Nakamura, S. (1997). Localized excitons in InGaN. Materials Research Society Symposium - Proceedings, 482, 613-624.