Emission mechanisms of the device-quality quantum well (QW) structure and bulk three dimensional InGaN materials grown on sapphire substrates without any epitaxial layer overgrown GaN base layers were investigated. The InxGa1-xN layers showed various degree of spatial potential (bandgap) fluctuation produced by some kinetic driving forces initiated by the threading dislocations or growth steps during the growth. The degree of fluctuation changed remarkably around nominal InN molar fraction x = 0.2, which changes to nearly 8-10% for the strained InxGa1-xN. This potential fluctuation induces energy tail states both in QW and three dimensional InGaN.
|ジャーナル||Materials Research Society Symposium - Proceedings|
|出版ステータス||Published - 1997 12月 1|
|イベント||Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA|
継続期間: 1997 12月 1 → 1997 12月 4
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