Low-energy ion-beam-induced epitaxial crystallization of GaAs

Naoto Kobayashi*, Masataka Hasegawa, Nobuyuki Hayashi

*この研究の対応する著者

研究成果: Article査読

13 被引用数 (Scopus)

抄録

Properties of the ion-beam-induced epitaxial crystallization (IBIEC) of thin layers of amorphous GaAs with a thickness of about 110 nm formed by As ion implantation have been investigated by using low-energy Ar and Kr ions with their projected ranges within the amorphous layer thickness. Recrystallization of the amorphous layer due to bombardments of Ar ions with energies higher than 60 keV and Kr ions with those higher than 110 keV was observed to proceed up to the sample surface in a layer-by-layer growth manner with residual defects remaining in the recrystallized layer. After eliminating the sputtering effect, regrowth rates per ion fluence were observed to have pseudo-linear dependence on incident ion energy whereas regrowth rates per nuclear energy deposition density showed to vary strongly as a function of incident ion energy. Present results suggest a crucial role of defect formation and its migration in the amorphous layer in the IBIEC.

本文言語English
ページ(範囲)790-794
ページ数5
ジャーナルNuclear Inst. and Methods in Physics Research, B
80-81
PART 2
DOI
出版ステータスPublished - 1993
外部発表はい

ASJC Scopus subject areas

  • 表面、皮膜および薄膜
  • 器械工学
  • 表面および界面

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