Low-energy ion-beam-induced epitaxial crystallization of GaAs

Naoto Kobayashi, Masataka Hasegawa, Nobuyuki Hayashi

研究成果: Article

12 引用 (Scopus)

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Properties of the ion-beam-induced epitaxial crystallization (IBIEC) of thin layers of amorphous GaAs with a thickness of about 110 nm formed by As ion implantation have been investigated by using low-energy Ar and Kr ions with their projected ranges within the amorphous layer thickness. Recrystallization of the amorphous layer due to bombardments of Ar ions with energies higher than 60 keV and Kr ions with those higher than 110 keV was observed to proceed up to the sample surface in a layer-by-layer growth manner with residual defects remaining in the recrystallized layer. After eliminating the sputtering effect, regrowth rates per ion fluence were observed to have pseudo-linear dependence on incident ion energy whereas regrowth rates per nuclear energy deposition density showed to vary strongly as a function of incident ion energy. Present results suggest a crucial role of defect formation and its migration in the amorphous layer in the IBIEC.

元の言語English
ページ(範囲)790-794
ページ数5
ジャーナルNuclear Inst. and Methods in Physics Research, B
80-81
発行部数PART 2
DOI
出版物ステータスPublished - 1993
外部発表Yes

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ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

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