Low-glancing-angle x-ray diffraction study on the relationship between crystallinity and properties of C60 field effect transistor

Hirotaka Ohashi; Katsumi Tanigaki; Ryotaro Kumashiro; Syuji Sugihara; Nobuya Hiroshiba; Shigeru Kimura; Kenichi Kato; Masaki Takata

doi:10.1063/1.1638882

Low-glancing-angle x-ray diffraction study on the relationship between crystallinity and properties of C₆₀ field effect transistor

Hirotaka Ohashi, Katsumi Tanigaki, Ryotaro Kumashiro, Syuji Sugihara, Nobuya Hiroshiba, Shigeru Kimura, Kenichi Kato, Masaki Takata

研究成果: Article › 査読

23 被引用数 (Scopus)

抄録

The relationship between the structure of C₆₀ thin films and its field effect transistor (FET) properties was investigated. The low glancing angle x-ray diffraction method at a high energy beam facility was used for the study. It was observed that the FET characteristics consisting of C ₆₀ thin films on Si substrates showed little dependence on the structural differences under conventional growth conditions. The trapping levels produced due to the chemical and physical adsorption of oxygen and water were found to influence the FET characteristics.

本文言語	English
ページ（範囲）	520-522
ページ数	3
ジャーナル	Applied Physics Letters
巻	84
号	4
DOI	https://doi.org/10.1063/1.1638882
出版ステータス	Published - 2004 1 26
外部発表	はい

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

文献へのアクセス

10.1063/1.1638882

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引用スタイル

Low-glancing-angle x-ray diffraction study on the relationship between crystallinity and properties of C₆₀ field effect transistor. / Ohashi, Hirotaka; Tanigaki, Katsumi; Kumashiro, Ryotaro; Sugihara, Syuji; Hiroshiba, Nobuya; Kimura, Shigeru; Kato, Kenichi; Takata, Masaki.

In: Applied Physics Letters, Vol. 84, No. 4, 26.01.2004, p. 520-522.

研究成果: Article › 査読

@article{26833b87ce6f4bacaae48505d93cd1a1,

title = "Low-glancing-angle x-ray diffraction study on the relationship between crystallinity and properties of C60 field effect transistor",

abstract = "The relationship between the structure of C60 thin films and its field effect transistor (FET) properties was investigated. The low glancing angle x-ray diffraction method at a high energy beam facility was used for the study. It was observed that the FET characteristics consisting of C 60 thin films on Si substrates showed little dependence on the structural differences under conventional growth conditions. The trapping levels produced due to the chemical and physical adsorption of oxygen and water were found to influence the FET characteristics.",

author = "Hirotaka Ohashi and Katsumi Tanigaki and Ryotaro Kumashiro and Syuji Sugihara and Nobuya Hiroshiba and Shigeru Kimura and Kenichi Kato and Masaki Takata",

year = "2004",

month = jan,

day = "26",

doi = "10.1063/1.1638882",

language = "English",

volume = "84",

pages = "520--522",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - Low-glancing-angle x-ray diffraction study on the relationship between crystallinity and properties of C60 field effect transistor

AU - Ohashi, Hirotaka

AU - Tanigaki, Katsumi

AU - Kumashiro, Ryotaro

AU - Sugihara, Syuji

AU - Hiroshiba, Nobuya

AU - Kimura, Shigeru

AU - Kato, Kenichi

AU - Takata, Masaki

PY - 2004/1/26

Y1 - 2004/1/26

N2 - The relationship between the structure of C60 thin films and its field effect transistor (FET) properties was investigated. The low glancing angle x-ray diffraction method at a high energy beam facility was used for the study. It was observed that the FET characteristics consisting of C 60 thin films on Si substrates showed little dependence on the structural differences under conventional growth conditions. The trapping levels produced due to the chemical and physical adsorption of oxygen and water were found to influence the FET characteristics.

AB - The relationship between the structure of C60 thin films and its field effect transistor (FET) properties was investigated. The low glancing angle x-ray diffraction method at a high energy beam facility was used for the study. It was observed that the FET characteristics consisting of C 60 thin films on Si substrates showed little dependence on the structural differences under conventional growth conditions. The trapping levels produced due to the chemical and physical adsorption of oxygen and water were found to influence the FET characteristics.

UR - http://www.scopus.com/inward/record.url?scp=1242307325&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1242307325&partnerID=8YFLogxK

U2 - 10.1063/1.1638882

DO - 10.1063/1.1638882

M3 - Article

AN - SCOPUS:1242307325

VL - 84

SP - 520

EP - 522

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

ER -