Low-glancing-angle x-ray diffraction study on the relationship between crystallinity and properties of C60 field effect transistor

Hirotaka Ohashi, Katsumi Tanigaki, Ryotaro Kumashiro, Syuji Sugihara, Nobuya Hiroshiba, Shigeru Kimura, Kenichi Kato, Masaki Takata

研究成果: Article査読

23 被引用数 (Scopus)

抄録

The relationship between the structure of C60 thin films and its field effect transistor (FET) properties was investigated. The low glancing angle x-ray diffraction method at a high energy beam facility was used for the study. It was observed that the FET characteristics consisting of C 60 thin films on Si substrates showed little dependence on the structural differences under conventional growth conditions. The trapping levels produced due to the chemical and physical adsorption of oxygen and water were found to influence the FET characteristics.

本文言語English
ページ(範囲)520-522
ページ数3
ジャーナルApplied Physics Letters
84
4
DOI
出版ステータスPublished - 2004 1 26
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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