The relationship between the structure of C60 thin films and its field effect transistor (FET) properties was investigated. The low glancing angle x-ray diffraction method at a high energy beam facility was used for the study. It was observed that the FET characteristics consisting of C 60 thin films on Si substrates showed little dependence on the structural differences under conventional growth conditions. The trapping levels produced due to the chemical and physical adsorption of oxygen and water were found to influence the FET characteristics.
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