抄録
The relationship between the structure of C60 thin films and its field effect transistor (FET) properties was investigated. The low glancing angle x-ray diffraction method at a high energy beam facility was used for the study. It was observed that the FET characteristics consisting of C 60 thin films on Si substrates showed little dependence on the structural differences under conventional growth conditions. The trapping levels produced due to the chemical and physical adsorption of oxygen and water were found to influence the FET characteristics.
本文言語 | English |
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ページ(範囲) | 520-522 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 84 |
号 | 4 |
DOI | |
出版ステータス | Published - 2004 1月 26 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)