抄録
The capacitance-voltage (C-V) and the current-voltage characteristics of metal/ZnSe/p-GaAs capacitors have been investigated; both epitaxial layers were grown by molecular beam epitaxy. In the capacitor structures highly resistive, stoichiometric ZnSe functioned as the pseudoinsulator on the doped GaAs layers. The capacitance-voltage measurements demonstrated that the capacitors could be biased from accumulation through depletion, and into deep depletion, with current in the range of 10-8 A cm-2. Very little frequency dispersion was observed in the C-V data when measured from 1 kHz to 1 MHz. From the high-frequency C-V curve, the surface state density as a function of position in the GaAs band gap was determined. Surface state densities were comparable to densities reported for (Al,Ga)As/GaAs heterojunctions.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 1359-1361 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 54 |
| 発行部数 | 14 |
| DOI | |
| 出版物ステータス | Published - 1989 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
これを引用
Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface. / Qian, Q. D.; Qiu, J.; Melloch, M. R.; Cooper, J. A.; Kolodziejski, L. A.; Kobayashi, Masakazu; Gunshor, R. L.
：: Applied Physics Letters, 巻 54, 番号 14, 1989, p. 1359-1361.研究成果: Article
}
TY - JOUR
T1 - Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface
AU - Qian, Q. D.
AU - Qiu, J.
AU - Melloch, M. R.
AU - Cooper, J. A.
AU - Kolodziejski, L. A.
AU - Kobayashi, Masakazu
AU - Gunshor, R. L.
PY - 1989
Y1 - 1989
N2 - The capacitance-voltage (C-V) and the current-voltage characteristics of metal/ZnSe/p-GaAs capacitors have been investigated; both epitaxial layers were grown by molecular beam epitaxy. In the capacitor structures highly resistive, stoichiometric ZnSe functioned as the pseudoinsulator on the doped GaAs layers. The capacitance-voltage measurements demonstrated that the capacitors could be biased from accumulation through depletion, and into deep depletion, with current in the range of 10-8 A cm-2. Very little frequency dispersion was observed in the C-V data when measured from 1 kHz to 1 MHz. From the high-frequency C-V curve, the surface state density as a function of position in the GaAs band gap was determined. Surface state densities were comparable to densities reported for (Al,Ga)As/GaAs heterojunctions.
AB - The capacitance-voltage (C-V) and the current-voltage characteristics of metal/ZnSe/p-GaAs capacitors have been investigated; both epitaxial layers were grown by molecular beam epitaxy. In the capacitor structures highly resistive, stoichiometric ZnSe functioned as the pseudoinsulator on the doped GaAs layers. The capacitance-voltage measurements demonstrated that the capacitors could be biased from accumulation through depletion, and into deep depletion, with current in the range of 10-8 A cm-2. Very little frequency dispersion was observed in the C-V data when measured from 1 kHz to 1 MHz. From the high-frequency C-V curve, the surface state density as a function of position in the GaAs band gap was determined. Surface state densities were comparable to densities reported for (Al,Ga)As/GaAs heterojunctions.
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U2 - 10.1063/1.100715
DO - 10.1063/1.100715
M3 - Article
AN - SCOPUS:0005989632
VL - 54
SP - 1359
EP - 1361
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 14
ER -