抄録
The capacitance-voltage (C-V) and the current-voltage characteristics of metal/ZnSe/p-GaAs capacitors have been investigated; both epitaxial layers were grown by molecular beam epitaxy. In the capacitor structures highly resistive, stoichiometric ZnSe functioned as the pseudoinsulator on the doped GaAs layers. The capacitance-voltage measurements demonstrated that the capacitors could be biased from accumulation through depletion, and into deep depletion, with current in the range of 10-8 A cm-2. Very little frequency dispersion was observed in the C-V data when measured from 1 kHz to 1 MHz. From the high-frequency C-V curve, the surface state density as a function of position in the GaAs band gap was determined. Surface state densities were comparable to densities reported for (Al,Ga)As/GaAs heterojunctions.
本文言語 | English |
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ページ(範囲) | 1359-1361 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 54 |
号 | 14 |
DOI | |
出版ステータス | Published - 1989 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)