Low-loss silicon oxynitride waveguides and branches for the 850-nm-wavelength region

Tai Tsuchizawa*, Toshifumi Watanabe, Koji Yamada, Hiroshi Fukuda, Seiichi Itabashi, Junichi Fujikata, Akiko Gomyo, Jun Ushida, Daisuke Okamoto, Kenichi Nishi, Keishi Ohashi

*この研究の対応する著者

研究成果: Article査読

11 被引用数 (Scopus)

抄録

We developed silicon oxynitride (SiON) waveguides and branches working at around 850 nm wavelength for on-chip optical interconnection. SiON films were deposited by plasma-enhanced chemical vapor deposition (PECVD) and were very transmissive in this wavelength region. The propagation losses of fabricated waveguides were as low as 0.2-0.3 dB/cm. The branches are based on multimode interference (MMI) and exhibited excellent 3 dB characteristics. We also integrated a SiON waveguide with a Si nano-photodiode (PD) with a surface plasmon antenna. A large photocurrent of about 0.1 mA at a coupling length of only 10μm and a high-speed response of 17ps were demonstrated for the waveguide-integrated Si nano-PD.

本文言語English
ページ(範囲)6739-6743
ページ数5
ジャーナルJapanese journal of applied physics
47
8 PART 2
DOI
出版ステータスPublished - 2008 8 22
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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