Low on-resistance of GaN p-i-n vertical conducting diodes grown on 4H-SiC substrates

Atsushi Nishikawa*, Kazuhide Kumakura, Toshiki Makimoto

*この研究の対応する著者

研究成果査読

3 被引用数 (Scopus)

抄録

We investigated the resistance of conductive AlGaN buffer layers and the current-voltage characteristics of GaN p-i-n vertical conducting diodes on n-type 4H-SiC substrates grown by low-pressure metalorganic vapor-phase epitaxy. High Si doping of the AlGaN buffer layer at the AlGaN/SiC interface produces ohmic current-voltage characteristics in spite of the large band offset between AlGaN and 4H-SiC. Owing to the optimization of the AlGaN buffer layer, a low on-resistance (Ron) of 1.12 mΩ cm2 with high breakdown voltage (VB) of 300 V is obtained for a GaN p-i-n vertical conducting diode on a 4H-SiC substrate, leading to the figure of merit (V B2/Ron) of 80 MW/cm2, which is larger than that for the diode with the same structure on a 6H-SiC substrate (62 MW/cm2). This result indicates that 4H-SiC is preferable for fabricating GaN-based electronic devices with a low on-resistance and high breakdown voltage.

本文言語English
ページ(範囲)2662-2665
ページ数4
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
4
7
DOI
出版ステータスPublished - 2007 12 1
外部発表はい
イベントInternational Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan
継続期間: 2006 10 222006 10 27

ASJC Scopus subject areas

  • 凝縮系物理学

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