Low-pressure diamond nuclation and growth on cu substrate

Shin Ichi Ojika, Satoshi Yamashita, Kazuhiro Kataoka, Takefumi Ishikura, Akira Yamaguchi, Hiroshi Kawarada

研究成果: Article

15 引用 (Scopus)

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We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in á CH4/H2 plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucléation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.

元の言語English
ページ(範囲)193-199
ページ数7
ジャーナルJapanese journal of applied physics
32
発行部数2 A
DOI
出版物ステータスPublished - 1993 2

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Ojika, S. I., Yamashita, S., Kataoka, K., Ishikura, T., Yamaguchi, A., & Kawarada, H. (1993). Low-pressure diamond nuclation and growth on cu substrate. Japanese journal of applied physics, 32(2 A), 193-199. https://doi.org/10.1143/JJAP.32.L200