Low-resistance graded AlxGa1-xN buffer layers for vertical conducting devices on n-SiC substrates

Atsushi Nishikawa*, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto

*この研究の対応する著者

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We investigated the Al composition and thickness dependence of the resistance of graded AlxGa1-xN buffer layers for vertical conducting devices on n-type 6H-SiC substrates. To measure current-voltage characteristics, a Ti/Au ohmic contact was formed on the backside of the SiC substrate. The Al composition of the buffer layer was varied from 2% to 10%. We found that the optimal buffer layer thickness for the lowest resistance decreases with increasing Al composition because the nucleation seeds on SiC substrate coalesce faster. Since the optimal layer thickness depends on the Al composition, the sheet Al concentration, which is calculated from the Al composition and the thickness, should be considered as a critical parameter for low buffer resistance of vertical conducting devices on n-SiC substrates.

本文言語English
ページ(範囲)819-821
ページ数3
ジャーナルJournal of Crystal Growth
298
SPEC. ISS
DOI
出版ステータスPublished - 2007 1月 1
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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