Low resistance magnetic tunnel junctions and their interface structures

J. Fujikata*, T. Ishi, S. Mori, K. Matsuda, K. Mori, H. Yokota, K. Hayashi, M. Nakada, A. Kamijo, K. Ohashi

*この研究の対応する著者

研究成果査読

16 被引用数 (Scopus)

抄録

Effects of interface structure and oxidation state were studied in stacked magnetic tunnel junction (MTJ) structures with top and bottom antiferromagnetic layers to obtain optimum resistance and high tunneling magnetoresistance (TMR) ratios for read heads. The roughness of the NiFe surface and the Al coverage were significantly improved by introduction of O2 surfactant gas on the Ta-seed-layer surface, which increased TMR ratios of the MTJ with low resistance area (RA) products of less than 10 Ω μm2. Furthermore, it was found that avoidance of Ni oxidation and Co oxidation at the tunnel barrier interface is essential to obtaining high TMR ratios, and that a good Al coverage and Fe-oxide formation may enhance TMR ratios when Fe-rich magnetic materials are used. For the top-type and bottom-type structures, a TMR ratio of 12%-17% with RA products of 6-7 Ω μm2 was obtained, which provides sufficient performance for read heads.

本文言語English
ページ(範囲)7558-7560
ページ数3
ジャーナルJournal of Applied Physics
89
11 II
DOI
出版ステータスPublished - 2001 6 1
外部発表はい
イベント8th Joint Magnetism and Magnetic Materials-Intermag Conference - San Antonio, TX, United States
継続期間: 2001 1 72001 1 11

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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