Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer

Kazuhide Kumakura*, Toshiki Makimoto, Naoki Kobayashi

*この研究の対応する著者

研究成果: Article査読

56 被引用数 (Scopus)

抄録

A strained InGaN contact layer inserted between Pd/Au and p-type GaN resulted in low ohmic contact resistance without any special treatments. The thickness and In mole fraction of the p-type InGaN varied from 2 nm to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN layers are effective in reducing the contact resistance. A contact layer of 2 nm thick strained In0.19Ga0.81N showed the lowest specific contact resistance of 1.1 × 10-6 Ω cm2. The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to large polarization-induced band bending at the surface as well as to the high hole concentration in p-type InGaN.

本文言語English
ページ(範囲)2588-2590
ページ数3
ジャーナルApplied Physics Letters
79
16
DOI
出版ステータスPublished - 2001 10月 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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