Low-resistance tunnel magnetoresistive head

K. Ohashi*, K. Hayashi, K. Nagahara, K. Ishihara, E. Fukami, J. Fujikata, S. Mori, M. Nakada, T. Mitsuzuka, K. Matsuda, H. Mori, A. Kamijo, H. Tsuge

*この研究の対応する著者

研究成果査読

30 被引用数 (Scopus)

抄録

A tunnel magnetoresistive (TMR) head with a low resistance of about 30 Ω and effective track width of 1.4 μm was fabricated using an in situ natural oxidation (ISNO) technique. Its read-output was almost the same as that expected from test elements at the wafer level. We found no large difference in noise voltages between TMR head and GMR head when their resistance was about 30 Ω. A very low-resistivity TMR element with a resistance-area product of 14 Ω · μm 2 and a fairly high ΔR/R of 14% was also developed using ISNO. A signal-to-noise ratio consideration suggests that such low resistance is a key to TMR heads for high recording densities.

本文言語English
ページ(範囲)2549-2553
ページ数5
ジャーナルIEEE Transactions on Magnetics
36
5 I
DOI
出版ステータスPublished - 2000 9
外部発表はい
イベント2000 International Magnetics Conference (INTERMAG 2000) - Toronto, Ont, Canada
継続期間: 2000 4 92000 4 12

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

フィンガープリント

「Low-resistance tunnel magnetoresistive head」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル