Low temperature bonding of LiNbO3 waveguide chips to Si substrates in air

Ryo Takigawa*, Eiji Higurashi, Tadatomo Suga, Satoshi Shinada, Tetsuya Kawanishi

*この研究の対応する著者

研究成果: Conference article査読

抄録

This paper describes the low-temperature bonding of a lithium niobate (LiNbO3) waveguide chip to a silicon (Si) substrate for integrated optical systems. The bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au thin films (thickness: 100 nm) of the LiNbO3 chip and the Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. The bonded chips fractured at bonding temperature higher than 150°C because of the coefficient of thermal expansion (CTE) mismatch. The LiNbO3 chips were successfully bonded to the Si substrates at relatively low temperature (100°C). The die-shear strength of the LiNbO3 chip was estimated to be more than 12 kg (3.8 MPa), the upper limit of our shear testing equipment.

本文言語English
論文番号605012
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
6050
DOI
出版ステータスPublished - 2005 12月 1
外部発表はい
イベントOptomechatronic Micro/Nano Devices and Components - Sappora, Japan
継続期間: 2005 12月 52005 12月 7

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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