Low temperature bonding using sub-micron Au particles for wafer-level MEMS packaging

Shin Ito, Jun Mizuno*, Hiroyuki Ishida, Toshinori Ogashiwa, Yukio Kanehira, Hiroshi Murai, Fumihiro Wakai, Shuichi Shoji

*この研究の対応する著者

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

In this study, low temperature bonding using sub-micron Au particles was investigated. Two types of Au particles with different average mean diameter of 0.1 μm and 0.3 μm were used. The 0.1 μm Au particles were sintered at lower temperature than that of 0.3 μm. These particles have an advantage of low sintering temperature under 200°C, and compensating surface roughness. The compression deformation properties of Au particles were measured. They were compressed to around 3 and 5 μm at 30 and 100 MPa applied pressure, respectively. Chip-level bonding was performed with sealing rings of Au particles. The tensile strength of 55.2 MPa was obtained by bonding under applied pressure of 50 MPa at 100°C. As the evaluation of hermeticity, gross leak test was performed for bonded chips with single, double, and triple sealing rings.

本文言語English
ホスト出版物のタイトル2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012
DOI
出版ステータスPublished - 2012 12月 1
イベント2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 - Kyoto, Japan
継続期間: 2012 12月 102012 12月 12

出版物シリーズ

名前2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012

Conference

Conference2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012
国/地域Japan
CityKyoto
Period12/12/1012/12/12

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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