Low-temperature crystallization induced by excimer laser irradiation of SrBi2Ta2O9 films

Kwang Soo Seol, Hironao Hiramatsu, Yoshimichi Ohki, In Hoon Choi, Yong Tea Kim

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Transition of a SrBi2Ta2O9 precursor film from amorphous to crystalline was induced by excimer laser irradiation. Both fluorite and perovskite crystalline structures in such films were obtained by excimer laser irradiation at substrate temperatures between 200 and 500 °C. Either an addition of excess bismuth in the precursor film or an increase in the substrate temperature enhanced the formation of the perovskite structure in the excimer laser-induced annealing process, resulting in the perovskite crystalline phase at a relatively lower temperature of 500 °C. Such a low temperature is preferred when SrBi2Ta2O9 is used in ferroelectric devices. The mechanism involved in this laser-induced crystallization is also discussed.

本文言語English
ページ(範囲)1883-1886
ページ数4
ジャーナルJournal of Materials Research
16
7
DOI
出版ステータスPublished - 2001 7

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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