Low temperature crystallization of SrBi2Ta2O9 film by excimer laser irradiation

K. S. Seol, H. Hiramatsu, Y. Ohki, D. S. Shin, I. H. Choi, Y. T. Kim

研究成果: Conference article

抜粋

Using a KrF or ArF excimer laser as an irradiation photon source, we have succeeded in crystallizing amorphous SrBi2Ta2O9 films at 200-290°C, quite lower temperatures than the conventional crystallization temperature. The crystallization is enhanced when the substrate temperature, irradiation time, or the laser power density is higher.

元の言語English
ページ(範囲)293-298
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
541
出版物ステータスPublished - 1999 1 1
イベントProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
継続期間: 1998 11 301998 12 3

    フィンガープリント

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Seol, K. S., Hiramatsu, H., Ohki, Y., Shin, D. S., Choi, I. H., & Kim, Y. T. (1999). Low temperature crystallization of SrBi2Ta2O9 film by excimer laser irradiation. Materials Research Society Symposium - Proceedings, 541, 293-298.