Low temperature Cu bonding with large tolerance of surface oxidation

Hui Ren, Fengwen Mu, Seongbin Shin, Lei Liu, Guisheng Zou, Tadatomo Suga

研究成果: Article

2 被引用数 (Scopus)

抄録

A novel method of low temperature all-Cu bonding was developed, which has a large tolerance for Cu surface oxidation and can even bond Cu with a thick oxide layer at 250 °C. It is significant for the chip level bonding because traditional methods have strict requirements for surface quality. The key process is to combine Cu nanoparticle paste and Pt-catalyzed formic acid vapor, which improved the bonding strength of oxidized-Cu by ∼78.5% and is expected to simplify the bonding process. To understand the mechanisms, interfacial analyses of the microstructure and composition were carried out, along with a surface analysis.

本文言語English
論文番号055127
ジャーナルAIP Advances
9
5
DOI
出版ステータスPublished - 2019 5 1
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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