Low temperature diamond film fabrication using magneto-active plasma CVD

M. Yuasa*, O. Arakaki, J. S. Ma, A. Hiraki, H. Kawarada

*この研究の対応する著者

研究成果: Article査読

32 被引用数 (Scopus)

抄録

Using magneto-active plasma CVD, diamond films have been fabricated at 0.01 torr with a substrate temperature of about 400°C. From the viewpoint of increasing plasma density, a gas mixture, CH3OH (H2 + He), obtained by adding a helium to a usually-used gas mixture CH3OH H2, has been employed in this study. For a constant CH3OH concentration (30%), microcrystalline diamond films of good quality can be obtained at a ratio of He (H2 + He) up to 50%, and the growth rate increases with an increase in the ratio. When He (H2 + He) is higher than 50%, graphite appears in the film because of the heavy bombardment on the diamond surface by the accelerated helium species in the plasma at low pressure (0.01 torr).

本文言語English
ページ(範囲)168-174
ページ数7
ジャーナルDiamond and Related Materials
1
2-4
DOI
出版ステータスPublished - 1992 3 25

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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