Low-temperature operation of diamond surface-channel field-effect transistors

Minoru Tachiki, Hiroaki Ishizaka, Tokishige Banno, Toshikatsu Sakai, Kwang Soup Song, Hitoshi Umezawa, Hiroshi Kawarada

研究成果: Conference article査読

抄録

Cryogenic operation of the diamond surface-channel field-effect transistors (FETs) is investigated. Metal-insulator-semiconductor FETs (MISFETs) are fabricated using CaF2 as a gate insulator. MISFETs operate successfully even at 4.4 K. At low temperature, field-effect enhances the drain current, even if the surface holes become almost frozen-out. Channel mobility increases as temperature decreases to 4.4 K, which indicates the reduced phonon scattering.

本文言語English
ページ(範囲)139-143
ページ数5
ジャーナルMaterials Research Society Symposium - Proceedings
719
出版ステータスPublished - 2002 1 1
イベントDefect and Impunity Engineered Semiconductors and Devices III - San Francisco, CA, United States
継続期間: 2002 4 12002 4 5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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