Cryogenic operation of the diamond surface-channel field-effect transistors (FETs) is investigated. Metal-insulator-semiconductor FETs (MISFETs) are fabricated using CaF2 as a gate insulator. MISFETs operate successfully even at 4.4 K. At low temperature, field-effect enhances the drain current, even if the surface holes become almost frozen-out. Channel mobility increases as temperature decreases to 4.4 K, which indicates the reduced phonon scattering.
|ジャーナル||Materials Research Society Symposium - Proceedings|
|出版ステータス||Published - 2002 1 1|
|イベント||Defect and Impunity Engineered Semiconductors and Devices III - San Francisco, CA, United States|
継続期間: 2002 4 1 → 2002 4 5
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