An ultra low-temperature (<300°C) silicon oxidation process in which KrF excimer laser light (λ = 248 nm) is irradiated in highly concentrated ozone has been developed. The growth rate of SiO2 film was 5.2nm/10 min at 300°C and 3.6 nm/10 min at 70°C. The leakage current densities of grown at 70°C SiO2 in an electric field of over 8 MV/cm match well the calculated curve based on the Fowler-Nordheim tunneling. The oxidation mechanisms for two growth modes are discussed.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 2005 8月 26|
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