Low temperature oxidation processing with high purity ozone

A. Kurokawa, Shingo Ichimura, H. J. Kang, D. W. Moon

研究成果: Conference article

1 引用 (Scopus)

抄録

To lower the temperature of oxide-passivation processing the high-purity ozone (more than 98 mole%) was used instead of usual thermal oxidation. Initial oxide formation on a Si(111) surface with high-purity ozone is investigated by X-ray photoelectron spectroscopy (XPS). From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. The oxidation with ozone also proceeds on the hydrogen passivated surface which oxygen molecules do not oxidize.

元の言語English
ページ(範囲)269-274
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
429
出版物ステータスPublished - 1996 12 1
外部発表Yes
イベントProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
継続期間: 1996 4 81996 4 12

Fingerprint

Ozone
ozone
purity
Oxidation
oxidation
Processing
Oxygen
Oxides
oxygen
Temperature
oxides
Passivation
passivity
Hydrogen
X ray photoelectron spectroscopy
photoelectron spectroscopy
Molecules
hydrogen
molecules
x rays

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Low temperature oxidation processing with high purity ozone. / Kurokawa, A.; Ichimura, Shingo; Kang, H. J.; Moon, D. W.

:: Materials Research Society Symposium - Proceedings, 巻 429, 01.12.1996, p. 269-274.

研究成果: Conference article

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