To lower the temperature of oxide-passivation processing the high-purity ozone (more than 98 mole%) was used instead of usual thermal oxidation. Initial oxide formation on a Si(111) surface with high-purity ozone is investigated by X-ray photoelectron spectroscopy (XPS). From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. The oxidation with ozone also proceeds on the hydrogen passivated surface which oxygen molecules do not oxidize.
|ジャーナル||Materials Research Society Symposium - Proceedings|
|出版ステータス||Published - 1996|
|イベント||Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA|
継続期間: 1996 4 8 → 1996 4 12
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