Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glan

Masayoshi Esashi, Akira Nakano, Shuichi Shoji, Hiroyuki Hebiguchi

研究成果: Article査読

57 被引用数 (Scopus)

抄録

Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.

本文言語English
ページ(範囲)931-934
ページ数4
ジャーナルSensors and Actuators: A. Physical
23
1-3
DOI
出版ステータスPublished - 1990 4
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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